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Início > Produtos > Produtos Semicondutores Discretos > Diodos > Retificadores de ponte

Retificadores de ponte

Nº da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Série	Pacote/Caixa	Embalagem	Status do produto	Tipo de diodo	Tecnologia	Tensão - Pico reverso (máx.)	Corrente - Média retificada (Io)	Tensão - Direta (Vf) (Máx.) @ If	Corrente - Fuga Reversa @ Vr	Temperatura operacional	Grau	Qualificação	Tipo de montagem	Pacote do dispositivo do fornecedor
KBP305G C2G BRIDGE RECT 1PHASE 600V 3A KBP Taiwan Semiconductor Corporation	6,093	-	RFQ	Ficha técnica	-	4-SIP, KBP	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1.1 V @ 3 A	10 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	KBP
KBP307G C2 BRIDGE RECT 1PHASE 1KV 3A KBP Taiwan Semiconductor Corporation	2,446	-	RFQ	Ficha técnica	-	4-SIP, KBP	Tube	Obsolete	Single Phase	Standard	1 kV	3 A	1.1 V @ 3 A	10 µA @ 1000 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	KBP
KBP307G C2G BRIDGE RECT 1PHASE 1KV 3A KBP Taiwan Semiconductor Corporation	7,951	-	RFQ	Ficha técnica	-	4-SIP, KBP	Tube	Obsolete	Single Phase	Standard	1 kV	3 A	1.1 V @ 3 A	10 µA @ 1000 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	KBP
CBR1F-010 BRIDGE RECT 1P 100V 1.5A A CASE Central Semiconductor Corp	6,417	-	RFQ	Ficha técnica	-	4-Circular, A Case	Box	Obsolete	Single Phase	Standard	100 V	1.5 A	1.3 V @ 1 A	10 µA @ 100 V	-65°C ~ 150°C (TJ)	-	-	Through Hole	A Case
CBR2-010 BRIDGE RECT 1P 100V 2A A CASE Central Semiconductor Corp	6,232	-	RFQ	Ficha técnica	-	4-Circular, A Case	Box	Obsolete	Single Phase	Standard	100 V	2 A	1.1 V @ 2 A	10 µA @ 100 V	-65°C ~ 150°C (TJ)	-	-	Through Hole	A Case
CBR2-020 BRIDGE RECT 1P 200V 2A A CASE Central Semiconductor Corp	9,911	-	RFQ	Ficha técnica	-	4-Circular, A Case	Box	Obsolete	Single Phase	Standard	200 V	2 A	1.1 V @ 2 A	10 µA @ 200 V	-65°C ~ 150°C (TJ)	-	-	Through Hole	A Case
CBR2-040 BRIDGE RECT 1P 400V 2A A CASE Central Semiconductor Corp	4,859	-	RFQ	Ficha técnica	-	4-Circular, A Case	Box	Obsolete	Single Phase	Standard	400 V	2 A	1.1 V @ 2 A	10 µA @ 400 V	-65°C ~ 150°C (TJ)	-	-	Through Hole	A Case
CBR2-080 BRIDGE RECT 1P 800V 2A A CASE Central Semiconductor Corp	8,562	-	RFQ	Ficha técnica	-	4-Circular, A Case	Box	Obsolete	Single Phase	Standard	800 V	2 A	1.1 V @ 2 A	10 µA @ 800 V	-65°C ~ 150°C (TJ)	-	-	Through Hole	A Case
CBR2-100 BRIDGE RECT 1PHASE 1KV 2A A CASE Central Semiconductor Corp	2,234	-	RFQ	Ficha técnica	-	4-Circular, A Case	Box	Obsolete	Single Phase	Standard	1 kV	2 A	1.1 V @ 2 A	10 µA @ 1000 V	-65°C ~ 150°C (TJ)	-	-	Through Hole	A Case
G3SBA60-5410M3/45 BRIDGE RECT 1PHASE 600V 2.3A GBU Vishay General Semiconductor - Diodes Division	7,484	-	RFQ	Ficha técnica	-	4-SIP, GBU	Tube	Obsolete	Single Phase	Standard	600 V	2.3 A	1 V @ 2 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBU
G3SBA60-5410M3/51 BRIDGE RECT 1PHASE 600V 2.3A GBU Vishay General Semiconductor - Diodes Division	4,721	-	RFQ	Ficha técnica	-	4-SIP, GBU	Tube	Obsolete	Single Phase	Standard	600 V	2.3 A	1 V @ 2 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBU
GBL06-3E3/51 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	7,150	-	RFQ	Ficha técnica	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-5303E3/51 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	3,590	-	RFQ	Ficha técnica	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-5305E3/45 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	2,499	-	RFQ	Ficha técnica	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-5306E3/51 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	7,727	-	RFQ	Ficha técnica	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-5308E3/51 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	5,137	-	RFQ	Ficha técnica	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-5600E3/51 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	8,504	-	RFQ	Ficha técnica	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-5701E3/51 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	9,111	-	RFQ	Ficha técnica	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-6177E3/51 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	2,045	-	RFQ	Ficha técnica	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL
GBL06L-6832E3/45 BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division	4,891	-	RFQ	Ficha técnica	-	4-SIP, GBL	Tube	Obsolete	Single Phase	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL

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