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Início > Produtos > Produtos Semicondutores Discretos > Diodos > Retificadores de ponte

Retificadores de ponte

Nº da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Série	Pacote/Caixa	Embalagem	Status do produto	Tipo de diodo	Tecnologia	Tensão - Pico reverso (máx.)	Corrente - Média retificada (Io)	Tensão - Direta (Vf) (Máx.) @ If	Corrente - Fuga Reversa @ Vr	Temperatura operacional	Grau	Qualificação	Tipo de montagem	Pacote do dispositivo do fornecedor
GBJ2504 BRIDGE RECT 1PHASE 400V 25A GBJ SMC Diode Solutions	7,887	-	RFQ	Ficha técnica	-	4-ESIP	Tube	Active	Single Phase	Standard	400 V	25 A	1.1 V @ 12.5 A	10 µA @ 400 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBJ
GBJ2508 BRIDGE RECT 1PHASE 800V 25A GBJ SMC Diode Solutions	8,920	-	RFQ	Ficha técnica	-	4-ESIP	Tube	Active	Single Phase	Standard	800 V	25 A	1.1 V @ 12.5 A	10 µA @ 800 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBJ
DB102S-G BRIDGE RECT 1PHASE 100V 1A DBS Comchip Technology	2,937	-	RFQ	Ficha técnica	-	4-SMD, Gull Wing	Tape & Reel (TR)	Obsolete	Single Phase	Standard	100 V	1 A	1.1 V @ 1 A	10 µA @ 100 V	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DBS
BR605 BRIDGE RECT 1PHASE 50V 6A BR-6 GeneSiC Semiconductor	9,928	-	RFQ	Ficha técnica	-	4-Square, BR-6	Bulk	Active	Single Phase	Standard	50 V	6 A	1 V @ 3 A	10 µA @ 50 V	-65°C ~ 125°C (TJ)	-	-	Through Hole	BR-6
BR61 BRIDGE RECT 1PHASE 100V 6A BR-6 GeneSiC Semiconductor	6,827	-	RFQ	Ficha técnica	-	4-Square, BR-6	Bulk	Active	Single Phase	Standard	100 V	6 A	1 V @ 3 A	10 µA @ 100 V	-65°C ~ 125°C (TJ)	-	-	Through Hole	BR-6
BR610 BRIDGE RECT 1PHASE 1KV 6A BR-6 GeneSiC Semiconductor	2,352	-	RFQ	Ficha técnica	-	4-Square, BR-6	Bulk	Active	Single Phase	Standard	1 kV	6 A	1 V @ 3 A	10 µA @ 1000 V	-65°C ~ 125°C (TJ)	-	-	Through Hole	BR-6
BR64 BRIDGE RECT 1PHASE 400V 6A BR-6 GeneSiC Semiconductor	5,278	-	RFQ	Ficha técnica	-	4-Square, BR-6	Bulk	Active	Single Phase	Standard	400 V	6 A	1 V @ 3 A	10 µA @ 400 V	-65°C ~ 125°C (TJ)	-	-	Through Hole	BR-6
BR66 BRIDGE RECT 1PHASE 600V 6A BR-6 GeneSiC Semiconductor	9,337	-	RFQ	Ficha técnica	-	4-Square, BR-6	Bulk	Active	Single Phase	Standard	600 V	6 A	1 V @ 3 A	10 µA @ 600 V	-65°C ~ 125°C (TJ)	-	-	Through Hole	BR-6
BR68 BRIDGE RECT 1PHASE 800V 6A BR-6 GeneSiC Semiconductor	4,852	-	RFQ	Ficha técnica	-	4-Square, BR-6	Bulk	Active	Single Phase	Standard	800 V	6 A	1 V @ 3 A	10 µA @ 800 V	-65°C ~ 125°C (TJ)	-	-	Through Hole	BR-6
KBU8D BRIDGE RECT 1PHASE 200V 8A KBU GeneSiC Semiconductor	2,247	-	RFQ	Ficha técnica	-	4-SIP, KBU	Bulk	Active	Single Phase	Standard	200 V	8 A	1 V @ 8 A	10 µA @ 200 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	KBU
TT8M BRIDGE RECT 1PHASE 1KV 8A TT Diodes Incorporated	2,681	-	RFQ	Ficha técnica	-	4-SMD, Gull Wing	Tape & Reel (TR)	Active	Single Phase	Standard	1 kV	8 A	1 V @ 4 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TT
G3SBA20-M3/51 BRIDGE RECT 1PHASE 200V 2.3A GBU Vishay General Semiconductor - Diodes Division	4,662	-	RFQ	Ficha técnica	-	4-SIP, GBU	Tray	Active	Single Phase	Standard	200 V	2.3 A	1 V @ 2 A	5 µA @ 200 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBU
G3SBA80-M3/51 BRIDGE RECT 1PHASE 800V 2.3A GBU Vishay General Semiconductor - Diodes Division	5,269	-	RFQ	Ficha técnica	-	4-SIP, GBU	Tray	Active	Single Phase	Standard	800 V	2.3 A	1 V @ 2 A	5 µA @ 800 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBU
GBJ10K BRIDGE RECT 1PHASE 800V 10A GBJ GeneSiC Semiconductor	2,362	-	RFQ	Ficha técnica	-	4-SIP, GBJ	Bulk	Active	Single Phase	Standard	800 V	10 A	1.05 V @ 5 A	10 µA @ 800 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBJ
GBJ10D BRIDGE RECT 1PHASE 200V 10A GBJ GeneSiC Semiconductor	2,000	-	RFQ	Ficha técnica	-	4-SIP, GBJ	Bulk	Active	Single Phase	Standard	200 V	10 A	1.05 V @ 5 A	10 µA @ 200 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBJ
GBJ10J BRIDGE RECT 1PHASE 600V 10A GBJ GeneSiC Semiconductor	8,916	-	RFQ	Ficha técnica	-	4-SIP, GBJ	Bulk	Active	Single Phase	Standard	600 V	10 A	1.05 V @ 5 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBJ
GBJ10B BRIDGE RECT 1PHASE 100V 10A GBJ GeneSiC Semiconductor	4,579	-	RFQ	Ficha técnica	-	4-SIP, GBJ	Bulk	Active	Single Phase	Standard	100 V	10 A	1.05 V @ 5 A	10 µA @ 100 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBJ
GBJ10G BRIDGE RECT 1PHASE 400V 10A GBJ GeneSiC Semiconductor	2,147	-	RFQ	Ficha técnica	-	4-SIP, GBJ	Bulk	Active	Single Phase	Standard	400 V	10 A	1.05 V @ 5 A	5 µA @ 400 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBJ
GBJ10M BRIDGE RECT 1PHASE 1KV 10A GBJ GeneSiC Semiconductor	3,000	-	RFQ	Ficha técnica	-	4-SIP, GBJ	Bulk	Active	Single Phase	Standard	1 kV	10 A	1.05 V @ 5 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBJ
GBL005-E3/45 BRIDGE RECT 1PHASE 50V 3A GBL Vishay General Semiconductor - Diodes Division	6,560	-	RFQ	Ficha técnica	-	4-SIP, GBL	Tube	Discontinued	Single Phase	Standard	50 V	3 A	1.1 V @ 4 A	5 µA @ 50 V	-55°C ~ 150°C (TJ)	-	-	Through Hole	GBL

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