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Início > Produtos > Produtos Semicondutores Discretos > Transistores > FETs, MOSFETs > Matrizes de FET, MOSFET

Matrizes de FET, MOSFET

Nº da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Série	Pacote/Caixa	Embalagem	Status do produto	Tecnologia	Configuração	Característica FET	Dreno para tensão de fonte (Vdss)	Corrente - Dreno contínuo (Id) @ 25 °C	Rds ligado (Máx.) @ Id, Vgs	Vgs(th) (Máx.) @ Id	Carga de porta (Qg) (máx.) @ Vgs	Capacitância de entrada (Ciss) (máx.) @ Vds	Potência - Máx.	Temperatura operacional	Grau	Qualificação	Tipo de montagem	Pacote do dispositivo do fornecedor
MSCSM120AM08T3AG MOSFET 2N-CH 1200V 337A Microchip Technology	9,113	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1200V (1.2kV)	337A (Tc)	7.8mOhm @ 160A, 20V	2.8V @ 12mA	928nC @ 20V	12100pF @ 1000V	1.409kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM70VR1M07CT6AG MOSFET 2N-CH 700V 349A Microchip Technology	2,976	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	700V	349A (Tc)	6.4mOhm @ 120A, 20V	2.4V @ 12mA	645nC @ 20V	13500pF @ 700V	966W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM120VR1M11CT6AG MOSFET 2N-CH 1200V 251A Microchip Technology	9,541	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1200V (1.2kV)	251A (Tc)	10.4mOhm @ 120A, 20V	2.8V @ 9mA	696nC @ 20V	9000pF @ 1000V	1.042kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM70TAM10TPAG MOSFET 6N-CH 700V 238A Microchip Technology	4,778	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	6 N-Channel (Phase Leg)	-	700V	238A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	674W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM70AM025T6AG MOSFET 2N-CH 700V 689A Microchip Technology	9,269	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	700V	689A (Tc)	3.2mOhm @ 240A, 20V	2.4V @ 24mA	1290nC @ 20V	27000pF @ 700V	1.882kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM70HM05AG MOSFET 4N-CH 700V 349A Microchip Technology	6,010	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	-	700V	349A (Tc)	6.4mOhm @ 120A, 20V	2.4V @ 12mA	645nC @ 20V	13500pF @ 700V	966W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM70AM025D3AG MOSFET 2N-CH 700V 689A Microchip Technology	8,245	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	700V	689A (Tc)	3.2mOhm @ 240A, 20V	2.4V @ 24mA	1290nC @ 20V	27000pF @ 700V	1.882kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM120TAM16TPAG MOSFET 6N-CH 1200V 171A Microchip Technology	5,194	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	6 N-Channel (Phase Leg)	-	1200V (1.2kV)	171A (Tc)	16mOhm @ 80A, 20V	2.8V @ 6mA	464nC @ 20V	6040pF @ 1000V	728W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM120HM083AG MOSFET 4N-CH 1200V 251A Microchip Technology	7,235	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	-	1200V (1.2kV)	251A (Tc)	10.4mOhm @ 120A, 20V	2.8V @ 9mA	696nC @ 20V	9000pF @ 1000V	1.042kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM70AM025T6LIAG MOSFET 2N-CH 700V 689A Microchip Technology	2,593	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	700V	689A (Tc)	3.2mOhm @ 240A, 20V	2.4V @ 24mA	1290nC @ 20V	27000pF @ 700V	1.882kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM70VR1M03CT6AG MOSFET 2N-CH 700V 585A Microchip Technology	5,261	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	700V	585A (Tc)	3.8mOhm @ 200A, 20V	2.4V @ 20mA	1075nC @ 20V	22500pF @ 700V	1.625kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM120AM042D3AG MOSFET 2N-CH 1200V 495A Microchip Technology	8,526	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 18mA	1392nC @ 20V	18100pF @ 1000V	2.031kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM120AM042T6LIAG MOSFET 2N-CH 1200V 495A Microchip Technology	8,847	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 18mA	1392nC @ 20V	18100pF @ 1000V	2.031kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM70HM038AG MOSFET 4N-CH 700V 464A Microchip Technology	8,657	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	-	700V	464A (Tc)	4.8mOhm @ 160A, 20V	2.4V @ 16mA	860nC @ 20V	18000pF @ 700V	1.277kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM120VR1M062CT6AG MOSFET 2N-CH 1200V 420A Microchip Technology	6,745	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1200V (1.2kV)	420A (Tc)	6.2mOhm @ 200A, 20V	2.8V @ 15mA	1160nC @ 20V	15100pF @ 1000V	1.753kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM120HM063AG MOSFET 4N-CH 1200V 333A Microchip Technology	5,753	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	-	1200V (1.2kV)	333A (Tc)	7.8mOhm @ 80A, 20V	2.8V @ 12mA	928nC @ 20V	12000pF @ 1000V	873W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM120VR1M16CTPAG MOSFET 6N-CH 1200V 171A Microchip Technology	6,532	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	6 N-Channel (Phase Leg)	-	1200V (1.2kV)	171A (Tc)	16mOhm @ 80A, 20V	2.8V @ 6mA	464nC @ 20V	6040pF @ 1000V	728W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
WAS350M12BM3 MOSFET 2N-CH 1200V 417A Wolfspeed, Inc.	5,400	-	RFQ	Ficha técnica	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	417A (Tc)	5.2mOhm @ 350A, 15V	3.6V @ 85mA	844nC @ 15V	25700pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	-
MSCSM120TAM11TPAG MOSFET 6N-CH 1200V 251A Microchip Technology	5,406	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	6 N-Channel (Phase Leg)	-	1200V (1.2kV)	251A (Tc)	10.4mOhm @ 120A, 20V	2.8V @ 9mA	696nC @ 20V	9060pF @ 1000V	1.042kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM120AM027T6AG MOSFET 2N-CH 1200V 733A Microchip Technology	8,830	-	RFQ	Ficha técnica	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1200V (1.2kV)	733A (Tc)	3.5mOhm @ 360A, 20V	2.8V @ 27mA	2088nC @ 20V	27000pF @ 1000V	2.97kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-

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