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IGBTs simples

Nº da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Série	Pacote/Caixa	Embalagem	Status do produto	Tipo de IGBT	Tensão - Coletor Emissor Ruptura (Máx.)	Corrente - Coletor (Ic) (Máx.)	Corrente - Coletor pulsado (Icm)	Vce(ligado) (máx.) @ Vge, Ic	Potência - Máx.	Energia de comutação	Tipo de entrada	Carga de porta	Td (ligado/desligado) @ 25 °C	Condição de teste	Tempo de Recuperação Reversa (trr)	Temperatura operacional	Grau	Qualificação	Tipo de montagem	Pacote do dispositivo do fornecedor
APT75GN60SDQ2G IGBT TRENCH FS 600V 155A D3PAK Microchip Technology	33	-	RFQ	Ficha técnica	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Trench Field Stop	600 V	155 A	225 A	1.85V @ 15V, 75A	536 W	2.5mJ (on), 2.14mJ (off)	Standard	485 nC	47ns/385ns	400V, 75A, 1Ohm, 15V	25 ns	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK
AUIRGPS4070D0 AUIRGPS4070D0 - AUTOMOTIVE IGBT Infineon Technologies	48	-	RFQ	Ficha técnica	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT50GT120LRG IGBT NPT 1200V 50A TO264 Microchip Technology	27	-	RFQ	Ficha técnica	Thunderbolt IGBT®	TO-264-3, TO-264AA	Tube	Active	NPT	1200 V	50 A	150 A	3.7V @ 15V, 50A	625 W	-, 2.33mJ (off)	Standard	340 nC	24ns/230ns	800V, 50A, 4.7Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (L)
APT50GT120B2RDLG IGBT NPT 1200V 106A Microsemi Corporation	8	-	RFQ	Ficha técnica	Thunderbolt IGBT®	TO-247-3 Variant	Tube	Active	NPT	1200 V	106 A	150 A	3.7V @ 15V, 50A	694 W	3585µJ (on), 1910µJ (off)	Standard	240 nC	23ns/215ns	800V, 50A, 4.7Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	-
IXYF30N450 IGBT 4500V 23A ISOPLUSI4 IXYS	17	-	RFQ	Ficha técnica	XPT™	ISOPLUSi5-PAK™	Tube	Active	-	4500 V	23 A	190 A	3.9V @ 15V, 30A	230 W	-	Standard	88 nC	38ns/168ns	960V, 30A, 15Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	ISOPLUS i4-PAC™
STGB6NC60HT4 IGBT 600V 15A 56W D2PAK STMicroelectronics	174	-	RFQ	Ficha técnica	PowerMESH™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	-	600 V	15 A	21 A	2.5V @ 15V, 3A	56 W	20µJ (on), 68µJ (off)	Standard	13.6 nC	12ns/76ns	390V, 3A, 10Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK
STGP10NC60H IGBT 600V 20A 60W TO220 STMicroelectronics	59	-	RFQ	Ficha técnica	PowerMESH™	TO-220-3	Tube	Obsolete	-	600 V	20 A	-	2.5V @ 15V, 5A	60 W	31.8µJ (on), 95µJ (off)	Standard	19.2 nC	14.2ns/72ns	390V, 5A, 10Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
NGB8204ANT4G INSULATED GATE BIPOLAR TRANSISTO onsemi	795	-	RFQ	Ficha técnica	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	-	430 V	18 A	50 A	2.5V @ 4V, 15A	115 W	-	Logic	-	-	-	-	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IKD06N60RAATMA2 IGBT Infineon Technologies	807	-	RFQ	Ficha técnica	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRGS8B60KPBF IGBT Infineon Technologies	550	-	RFQ	Ficha técnica	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FGP10N60UNDF FGP10N60UNDF - IGBT, 600V, 10A, Fairchild Semiconductor	800	-	RFQ	Ficha técnica	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGW30N60H3FKSA1 IGBT TRENCH FS 600V 60A TO247-3 Infineon Technologies	2,255	-	RFQ	Ficha técnica	TrenchStop®	TO-247-3	Tube	Active	Trench Field Stop	600 V	60 A	120 A	2.4V @ 15V, 30A	187 W	1.38mJ	Standard	165 nC	21ns/207ns	400V, 30A, 10.5Ohm, 15V	-	-40°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-1
STGW75M65DF2 IGBT TRENCH FS 650V 120A TO247-3 STMicroelectronics	8,112	-	RFQ	Ficha técnica	M	TO-247-3	Tube	Active	Trench Field Stop	650 V	120 A	225 A	2.1V @ 15V, 75A	468 W	690µJ (on), 2.54mJ (off)	Standard	225 nC	47ns/125ns	400V, 75A, 3.3Ohm, 15V	165 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
IXYP50N65C3 IGBT 650V 130A 600W TO220 IXYS	7,799	-	RFQ	Ficha técnica	GenX3™, XPT™	TO-220-3	Tube	Active	PT	650 V	130 A	250 A	2.1V @ 15V, 36A	600 W	1.3mJ (on), 370µJ (off)	Standard	80 nC	22ns/80ns	400V, 36A, 5Ohm, 15V	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
IXGA20N120A3 IGBT PT 1200V 40A TO263AA IXYS	4,657	-	RFQ	Ficha técnica	GenX3™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	PT	1200 V	40 A	120 A	2.5V @ 15V, 20A	180 W	2.85mJ (on), 6.47mJ (off)	Standard	50 nC	16ns/290ns	960V, 20A, 10Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA
IXBT42N170 IGBT 1700V 80A TO268AA IXYS	5,888	-	RFQ	Ficha técnica	BIMOSFET™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	-	1700 V	80 A	300 A	2.8V @ 15V, 42A	360 W	-	Standard	188 nC	-	-	1.32 µs	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA
IXYT30N450HV IGBT 4500V 60A TO268HV IXYS	5,472	-	RFQ	Ficha técnica	XPT™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	-	4500 V	60 A	200 A	3.9V @ 15V, 30A	430 W	-	Standard	88 nC	38ns/168ns	960V, 30A, 10Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXYT)
IXBK75N170 IGBT 1700V 200A TO264AA IXYS	7,696	-	RFQ	Ficha técnica	BIMOSFET™	TO-264-3, TO-264AA	Tube	Active	-	1700 V	200 A	580 A	3.1V @ 15V, 75A	1040 W	-	Standard	350 nC	-	-	1.5 µs	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA
IXYX140N120A4 IGBT PT 1200V 480A PLUS247-3 IXYS	4,063	-	RFQ	Ficha técnica	XPT™, GenX4™	TO-247-3 Variant	Tube	Active	PT	1200 V	480 A	1200 A	1.7V @ 15V, 140A	1500 W	4.9mJ (on), 12mJ (off)	Standard	420 nC	52ns/590ns	600V, 70A, 1.5Ohm, 15V	47 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	PLUS247™-3
IXBX50N360HV IGBT 3600V 125A TO247PLUS-HV IXYS	1	-	RFQ	Ficha técnica	BIMOSFET™	TO-247-3 Variant	Tube	Active	-	3600 V	125 A	420 A	2.9V @ 15V, 50A	660 W	-	Standard	210 nC	46ns/205ns	960V, 50A, 5Ohm, 15V	1.7 µs	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247PLUS-HV

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