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SCRs

Nº da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Série	Pacote/Caixa	Embalagem	Status do produto	Voltagem - Estado desligado	Tensão - Disparo de Porta (Vgt) (Máx.)	Corrente - Disparo de Porta (Igt) (Máx.)	Tensão - Estado Ligado (Vtm) (Máx.)	Corrente - Estado Ligado (It (AV)) (Máx.)	Corrente - Estado Ligado (It (RMS)) (Máx.)	Corrente - Retenção (Ih) (Máx.)	Corrente - Estado desligado (Máx.)	Corrente - Não rep. Surto 50, 60 Hz (Itsm)	Tipo SCR	Temperatura operacional	Grau	Qualificação	Tipo de montagem	Pacote do dispositivo do fornecedor
MCR100-3 A1G SCR 100V 800MA TO92 Taiwan Semiconductor Corporation	7,209	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Obsolete	100 V	800 mV	200 µA	1.7 V	-	800 mA	5 mA	10 µA	10A @ 60Hz	Sensitive Gate	-40°C ~ 125°C (TJ)	-	-	Through Hole	TO-92
MCR100-4 A1G SCR 200V 800MA TO92 Taiwan Semiconductor Corporation	4,619	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Obsolete	200 V	800 mV	200 µA	1.7 V	-	800 mA	5 mA	10 µA	10A @ 60Hz	Sensitive Gate	-40°C ~ 125°C (TJ)	-	-	Through Hole	TO-92
MCR100-5 A1G SCR 300V 800MA TO92 Taiwan Semiconductor Corporation	7,469	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Obsolete	300 V	800 mV	200 µA	1.7 V	-	800 mA	5 mA	10 µA	10A @ 60Hz	Sensitive Gate	-40°C ~ 125°C (TJ)	-	-	Through Hole	TO-92
MCR100-6 A1G SCR 400V 800MA TO92 Taiwan Semiconductor Corporation	5,490	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Obsolete	400 V	800 mV	200 µA	1.7 V	-	800 mA	5 mA	10 µA	10A @ 60Hz	Sensitive Gate	-40°C ~ 125°C (TJ)	-	-	Through Hole	TO-92
MCR100-7 A1G SCR 500V 800MA TO92 Taiwan Semiconductor Corporation	3,042	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Obsolete	500 V	800 mV	200 µA	1.7 V	-	800 mA	5 mA	10 µA	10A @ 60Hz	Sensitive Gate	-40°C ~ 125°C (TJ)	-	-	Through Hole	TO-92
BT169H,412 SCR 800V 800MA TO92-3 WeEn Semiconductors	4,739	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA)	Bulk	Active	800 V	800 mV	100 µA	1.7 V	500 mA	800 mA	3 mA	100 µA	9A, 10A	Sensitive Gate	-	-	-	Through Hole	TO-92-3
BT169D-L,112 SCR 400V 800MA TO92-3 WeEn Semiconductors	4,570	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA)	Tube	Active	400 V	800 mV	50 µA	1.7 V	500 mA	800 mA	5 mA	100 µA	8A, 9A	Sensitive Gate	-	-	-	Through Hole	TO-92-3
BT169D/DG,126 SCR 400V 800MA TO92-3 WeEn Semiconductors	6,635	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Active	400 V	800 mV	200 µA	1.7 V	500 mA	800 mA	5 mA	100 µA	8A, 9A	Sensitive Gate	-	-	-	Through Hole	TO-92-3
BT169G-LML SCR 600V 800MA TO92-3 WeEn Semiconductors	9,464	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Active	600 V	800 mV	50 µA	1.7 V	500 mA	800 mA	1 mA	2 µA	8A, 9A	Sensitive Gate	125°C (TJ)	-	-	Through Hole	TO-92-3
BT169GEP SCR 600V 800MA TO92-3 WeEn Semiconductors	9,416	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA)	Bulk	Active	600 V	800 mV	200 µA	1.7 V	500 mA	800 mA	5 mA	100 µA	8A, 9A	Sensitive Gate	125°C (TJ)	-	-	Through Hole	TO-92-3
BT149B,126 SCR 200V 800MA TO92-3 NXP USA Inc.	8,688	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Obsolete	200 V	800 mV	200 µA	1.7 V	500 mA	800 mA	5 mA	100 µA	8A, 9A	Sensitive Gate	-	-	-	Through Hole	TO-92-3
BT169H/L01EP SCR 800V 800MA TO92-3 WeEn Semiconductors	5,194	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA)	Tape & Reel (TR)	Active	800 V	800 mV	100 µA	1.7 V	500 mA	800 mA	3 mA	100 µA	9A, 10A	Sensitive Gate	-40°C ~ 125°C	-	-	Through Hole	TO-92-3
BT169H-LML SCR 800V 800MA TO92-3 WeEn Semiconductors	5,904	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Active	800 V	800 mV	50 µA	1.7 V	500 mA	800 mA	3 mA	100 µA	9A, 10A	Sensitive Gate	125°C (TJ)	-	-	Through Hole	TO-92-3
BT149G,412 SCR 600V 800MA TO92-3 WeEn Semiconductors	3,941	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA)	Bulk	Active	600 V	800 mV	200 µA	1.7 V	500 mA	800 mA	5 mA	100 µA	8A, 9A	Sensitive Gate	-	-	-	Through Hole	TO-92-3
SD1A220A-13 THYRISTOR SMA T&R 5K Diodes Incorporated	7,993	-	RFQ	-	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BT169H,112 SCR 800V 800MA TO92-3 NXP USA Inc.	2,140	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tube	Obsolete	800 V	800 mV	100 µA	1.7 V	500 mA	800 mA	3 mA	100 µA	9A, 10A	Sensitive Gate	-	-	-	Through Hole	TO-92-3
P0111DA 1AA3 SCR 400V 800MA TO92-3 STMicroelectronics	8,725	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA)	Bulk	Active	400 V	800 mV	25 µA	1.95 V	500 mA	800 mA	5 mA	10 µA	7A, 8A	Sensitive Gate	-40°C ~ 125°C	-	-	Through Hole	TO-92-3
MCR100-3RL SCR 100V 800MA TO92-3 onsemi	3,203	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 Long Body, Formed Leads	Tape & Reel (TR)	Obsolete	100 V	800 mV	200 µA	1.7 V	-	800 mA	5 mA	10 µA	10A @ 60Hz	Sensitive Gate	-40°C ~ 110°C	-	-	Through Hole	TO-92 (TO-226)
N0118GA,412 SCR 600V 800MA TO92-3 WeEn Semiconductors	3,840	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA)	Bulk	Active	600 V	800 mV	7 µA	1.95 V	510 mA	800 mA	5 mA	10 µA	8A, 9A	Sensitive Gate	-	-	-	Through Hole	TO-92-3
N0118GA,116 SCR 600V 800MA TO92-3 WeEn Semiconductors	7,593	-	RFQ	Ficha técnica	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Reel (TR)	Active	600 V	800 mV	7 µA	1.95 V	510 mA	800 mA	5 mA	10 µA	8A, 9A	Sensitive Gate	-	-	-	Through Hole	TO-92-3

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