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Início > Produtos > Produtos Semicondutores Discretos > Transistores > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Nº da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Série	Pacote/Caixa	Embalagem	Status do produto	Tipo FET	Tecnologia	Dreno para tensão de fonte (Vdss)	Corrente - Dreno contínuo (Id) @ 25 °C	Tensão de acionamento (máx. Rds ligado, mín. Rds ligado)	Rds ligado (Máx.) @ Id, Vgs	Vgs(th) (Máx.) @ Id	Carga de porta (Qg) (máx.) @ Vgs	Vgs (máx.)	Capacitância de entrada (Ciss) (máx.) @ Vds	Característica FET	Dissipação de Energia (Máx.)	Temperatura operacional	Grau	Qualificação	Tipo de montagem	Pacote do dispositivo do fornecedor
AUIRFSA8409-7TRL MOSFET N-CH 40V 523A D2PAK Infineon Technologies	1,471	-	RFQ	Ficha técnica	HEXFET®	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	523A (Tc)	10V	0.69mOhm @ 100A, 10V	3.9V @ 250µA	460 nC @ 10 V	±20V	13975 pF @ 25 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7
FCA20N60F MOSFET N-CH 600V 20A TO3PN onsemi	409	-	RFQ	Ficha técnica	SuperFET™	TO-3P-3, SC-65-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	190mOhm @ 10A, 10V	5V @ 250µA	98 nC @ 10 V	±30V	3080 pF @ 25 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3PN
IXTQ26N50P MOSFET N-CH 500V 26A TO3P Littelfuse Inc.	262	-	RFQ	Ficha técnica	Polar	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	26A (Tc)	10V	230mOhm @ 13A, 10V	5.5V @ 250µA	65 nC @ 10 V	±30V	3600 pF @ 25 V	-	400W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P
IPP65R060CFD7XKSA1 650V FET COOLMOS TO247 Infineon Technologies	314	-	RFQ	Ficha técnica	CoolMOS™ CFD7	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	36A (Tc)	10V	60mOhm @ 16.4A, 10V	4.5V @ 860µA	68 nC @ 10 V	±20V	3288 pF @ 400 V	-	171W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1
IPP220N25NFDAKSA1 MOSFET N-CH 250V 61A TO220-3 Infineon Technologies	903	-	RFQ	Ficha técnica	OptiMOS™	TO-220-3	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	250 V	61A (Tc)	10V	22mOhm @ 61A, 10V	4V @ 270µA	86 nC @ 10 V	±20V	7076 pF @ 125 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
IPP60R040S7XKSA1 HIGH POWER_NEW PG-TO220-3 Infineon Technologies	274	-	RFQ	Ficha técnica	CoolMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	12V	40mOhm @ 13A, 12V	4.5V @ 790µA	83 nC @ 12 V	±20V	3127 pF @ 300 V	-	245W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3
NTP095N65S3HF MOSFET N-CH 650V 36A TO220-3 onsemi	495	-	RFQ	Ficha técnica	SuperFET® III	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	36A (Tc)	10V	95mOhm @ 18A, 10V	5V @ 860µA	66 nC @ 10 V	±30V	2930 pF @ 400 V	-	272W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
STW52NK25Z MOSFET N-CH 250V 52A TO247-3 STMicroelectronics	961	-	RFQ	Ficha técnica	SuperMESH™	TO-247-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	250 V	52A (Tc)	10V	45mOhm @ 26A, 10V	4.5V @ 150µA	160 nC @ 10 V	±30V	4850 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
FDB082N15A MOSFET N-CH 150V 117A D2PAK onsemi	632	-	RFQ	Ficha técnica	PowerTrench®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	117A (Tc)	10V	8.2mOhm @ 75A, 10V	4V @ 250µA	84 nC @ 10 V	±20V	6040 pF @ 25 V	-	294W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IPB017N08N5ATMA1 MOSFET N-CH 80V 120A D2PAK Infineon Technologies	2,137	-	RFQ	Ficha técnica	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	6V, 10V	1.7mOhm @ 100A, 10V	3.8V @ 280µA	223 nC @ 10 V	±20V	16900 pF @ 40 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3
FCP067N65S3 MOSFET N-CH 650V 44A TO220 onsemi	1,489	-	RFQ	Ficha técnica	SuperFET® III	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	44A (Tc)	10V	67mOhm @ 22A, 10V	4.5V @ 4.4mA	78 nC @ 10 V	±30V	3090 pF @ 400 V	-	312W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
IXTQ26P20P MOSFET P-CH 200V 26A TO3P Littelfuse Inc.	365	-	RFQ	Ficha técnica	PolarP™	TO-3P-3, SC-65-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	26A (Tc)	10V	170mOhm @ 13A, 10V	4V @ 250µA	56 nC @ 10 V	±20V	2740 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-3P
IPW65R050CFD7AXKSA1 MOSFET N-CH 650V 45A TO247-3-41 Infineon Technologies	198	-	RFQ	Ficha técnica	CoolMOS™ CFD7A	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	45A (Tc)	10V	50mOhm @ 24.8A, 10V	4.5V @ 1.24mA	102 nC @ 10 V	±20V	4975 pF @ 400 V	-	227W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-3-41
IRFPF50PBF MOSFET N-CH 900V 6.7A TO247-3 Vishay Siliconix	436	-	RFQ	Ficha técnica	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	6.7A (Tc)	10V	1.6Ohm @ 4A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	2900 pF @ 25 V	-	190W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
SIHP052N60EF-GE3 MOSFET EF SERIES TO-220AB Vishay Siliconix	934	-	RFQ	Ficha técnica	EF	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	52mOhm @ 23A, 10V	5V @ 250µA	101 nC @ 10 V	±30V	3380 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
FCH067N65S3-F155 MOSFET N-CH 650V 44A TO247 onsemi	1,045	-	RFQ	Ficha técnica	SuperFET® III	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	44A (Tc)	10V	67mOhm @ 22A, 10V	4.5V @ 4.4mA	78 nC @ 10 V	±30V	3090 pF @ 400 V	-	312W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
IMBG65R107M1HXTMA1 SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies	810	-	RFQ	Ficha técnica	CoolSIC™ M1	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	24A (Tc)	18V	141mOhm @ 8.9A, 18V	5.7V @ 2.6mA	15 nC @ 18 V	+23V, -5V	496 pF @ 400 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12
IPB60R060C7ATMA1 MOSFET N-CH 600V 35A TO263-3 Infineon Technologies	475	-	RFQ	Ficha técnica	CoolMOS™ C7	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	35A (Tc)	10V	60mOhm @ 15.9A, 10V	4V @ 800µA	68 nC @ 10 V	±20V	2850 pF @ 400 V	-	162W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK (TO-263)
MSC090SMA070B SICFET N-CH 700V TO247-3 Microchip Technology	127	-	RFQ	Ficha técnica	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	-	-	-	-	-	-	-	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
SIHB055N60EF-GE3 EF SERIES POWER MOSFET WITH FAST Vishay Siliconix	744	-	RFQ	Ficha técnica	EF	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	46A (Tc)	10V	55mOhm @ 26.5A, 10V	5V @ 250µA	95 nC @ 10 V	±30V	3707 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)

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