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FETs, MOSFETs

Foto Nº da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Série Pacote/Caixa Embalagem Status do produto Tipo FET Tecnologia Dreno para tensão de fonte (Vdss) Corrente - Dreno contínuo (Id) @ 25 °C Tensão de acionamento (máx. Rds ligado, mín. Rds ligado) Rds ligado (Máx.) @ Id, Vgs Vgs(th) (Máx.) @ Id Carga de porta (Qg) (máx.) @ Vgs Vgs (máx.) Capacitância de entrada (Ciss) (máx.) @ Vds Característica FET Dissipação de Energia (Máx.) Temperatura operacional Grau Qualificação Tipo de montagem Pacote do dispositivo do fornecedor
PJMP120N60EC_T0_00001

PJMP120N60EC_T0_00001

600V SUPER JUNCTION MOSFET

Panjit International Inc.

1,947
RFQ
PJMP120N60EC_T0_00001

Ficha técnica

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 120mOhm @ 12A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1960 pF @ 400 V - 235W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB-L
IRF3808PBF

IRF3808PBF

MOSFET N-CH 75V 140A TO220AB

Infineon Technologies

1,240
RFQ
IRF3808PBF

Ficha técnica

HEXFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 140A (Tc) 10V 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IPP057N08N3GXKSA1

IPP057N08N3GXKSA1

MOSFET N-CH 80V 80A TO220-3

Infineon Technologies

1,107
RFQ
IPP057N08N3GXKSA1

Ficha técnica

OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 5.7mOhm @ 80A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
STB18NF30

STB18NF30

MOSFET N-CH 330V 18A D2PAK

STMicroelectronics

966
RFQ
STB18NF30

Ficha técnica

STripFET™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 330 V 18A (Tc) 10V 180mOhm @ 9A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1650 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
STP5N105K5

STP5N105K5

MOSFET N-CH 1050V 3A TO220

STMicroelectronics

799
RFQ
STP5N105K5

Ficha técnica

MDmesh™ K5 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 1050 V 3A (Tc) 10V 3.5Ohm @ 1.5A, 10V 5V @ 100µA 12.5 nC @ 10 V ±30V 210 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
TPW4R008NH,L1Q

TPW4R008NH,L1Q

MOSFET N-CH 80V 116A 8DSOP

Toshiba Semiconductor and Storage

4,550
RFQ
TPW4R008NH,L1Q

Ficha técnica

U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 116A (Tc) 10V 4mOhm @ 50A, 10V 4V @ 1mA 59 nC @ 10 V ±20V 5300 pF @ 40 V - 800mW (Ta), 142W (Tc) 150°C (TJ) - - Surface Mount 8-DSOP Advance
RJK0654DPB-00#J5

RJK0654DPB-00#J5

MOSFET N-CH 60V 30A LFPAK

Renesas Electronics Corporation

4,239
RFQ
RJK0654DPB-00#J5

Ficha técnica

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Ta) 10V 8.3mOhm @ 15A, 10V - 27 nC @ 10 V ±20V 2000 pF @ 10 V - 55W (Tc) 150°C (TJ) - - Surface Mount LFPAK
2SJ687-ZK-E1-AY

2SJ687-ZK-E1-AY

MOSFET P-CH 20V 20A TO252

Renesas Electronics Corporation

3,791
RFQ
2SJ687-ZK-E1-AY

Ficha técnica

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 2.5V, 4.5V 7mOhm @ 10A, 4.5V - 57 nC @ 4.5 V ±12V 4400 pF @ 10 V - 1W (Ta), 36W (Tc) 150°C (TJ) - - Surface Mount TO-252 (MP-3ZK)
STB6NK60ZT4

STB6NK60ZT4

MOSFET N-CH 600V 6A D2PAK

STMicroelectronics

914
RFQ
STB6NK60ZT4

Ficha técnica

SuperMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 905 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
TK100S04N1L,LQ

TK100S04N1L,LQ

MOSFET N-CH 40V 100A DPAK

Toshiba Semiconductor and Storage

2,842
RFQ
TK100S04N1L,LQ

Ficha técnica

U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Ta) 4.5V, 10V 2.3mOhm @ 50A, 10V 2.5V @ 500µA 76 nC @ 10 V ±20V 5490 pF @ 10 V - 100W (Tc) 175°C (TJ) - - Surface Mount DPAK+
IPP60R299CPXKSA1

IPP60R299CPXKSA1

MOSFET N-CH 650V 11A TO220-3

Infineon Technologies

782
RFQ
IPP60R299CPXKSA1

Ficha técnica

CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
SIHB23N60E-GE3

SIHB23N60E-GE3

MOSFET N-CH 600V 23A D2PAK

Vishay Siliconix

200
RFQ
SIHB23N60E-GE3

Ficha técnica

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 158mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±30V 2418 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
STL18N65M2

STL18N65M2

MOSFET N-CH 650V 8A POWERFLAT HV

STMicroelectronics

2,842
RFQ
STL18N65M2

Ficha técnica

MDmesh™ M2 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 365mOhm @ 4A, 10V 4V @ 250µA 21.5 nC @ 10 V ±25V 764 pF @ 100 V - 57W (Tc) 150°C (TJ) - - Surface Mount PowerFlat™ (5x6) HV
SIHB20N50E-GE3

SIHB20N50E-GE3

MOSFET N-CH 500V 19A D2PAK

Vishay Siliconix

2,422
RFQ
SIHB20N50E-GE3

Ficha técnica

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
STF13NK50Z

STF13NK50Z

MOSFET N-CH 500V 11A TO220FP

STMicroelectronics

1,745
RFQ
STF13NK50Z

Ficha técnica

SuperMESH™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 480mOhm @ 6.5A, 10V 4.5V @ 100µA 47 nC @ 10 V ±30V 1600 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
IPP60R180C7XKSA1

IPP60R180C7XKSA1

MOSFET N-CH 600V 13A TO220-3

Infineon Technologies

445
RFQ
IPP60R180C7XKSA1

Ficha técnica

CoolMOS™ C7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 180mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 68W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IPP65R190CFD7XKSA1

IPP65R190CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies

930
RFQ
IPP65R190CFD7XKSA1

Ficha técnica

CoolMOS™ CFD7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
SUM90220E-GE3

SUM90220E-GE3

MOSFET N-CH 200V 64A D2PAK

Vishay Siliconix

730
RFQ
SUM90220E-GE3

Ficha técnica

ThunderFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 64A (Tc) 7.5V, 10V 21.6mOhm @ 15A, 10V 4V @ 250µA 48 nC @ 10 V ±20V 1950 pF @ 100 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
STF5N105K5

STF5N105K5

MOSFET N-CH 1050V 3A TO220

STMicroelectronics

651
RFQ
STF5N105K5

Ficha técnica

MDmesh™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 1050 V 3A (Tc) 10V 3.5Ohm @ 1.5A, 10V 5V @ 100µA 12.5 nC @ 10 V ±30V 210 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
IQE013N04LM6SCATMA1

IQE013N04LM6SCATMA1

OPTIMOS LOWVOLTAGE POWER MOSFET

Infineon Technologies

11,529
RFQ
IQE013N04LM6SCATMA1

Ficha técnica

OptiMOS™ 6 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 205A (Tc) 4.5V, 10V 1.35mOhm @ 20A, 10V 2V @ 51µA 41 nC @ 10 V ±20V 3800 pF @ 20 V - 2.5W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHSON-8-1
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