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FETs, MOSFETs

Foto Nº da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Série Pacote/Caixa Embalagem Status do produto Tipo FET Tecnologia Dreno para tensão de fonte (Vdss) Corrente - Dreno contínuo (Id) @ 25 °C Tensão de acionamento (máx. Rds ligado, mín. Rds ligado) Rds ligado (Máx.) @ Id, Vgs Vgs(th) (Máx.) @ Id Carga de porta (Qg) (máx.) @ Vgs Vgs (máx.) Capacitância de entrada (Ciss) (máx.) @ Vds Característica FET Dissipação de Energia (Máx.) Temperatura operacional Grau Qualificação Tipo de montagem Pacote do dispositivo do fornecedor
RS6R060BHTB1

RS6R060BHTB1

NCH 150V 60A, HSOP8, POWER MOSFE

Rohm Semiconductor

4,755
RFQ
RS6R060BHTB1

Ficha técnica

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 60A (Tc) 6V, 10V 21.8mOhm @ 60A, 10V 4V @ 1mA 46 nC @ 10 V ±20V 2750 pF @ 75 V - 104W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
PSMN1R5-50YLHX

PSMN1R5-50YLHX

PSMN1R5-50YLH/SOT1023/4 LEADS

Nexperia USA Inc.

4,205
RFQ
PSMN1R5-50YLHX

Ficha técnica

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50 V 200A (Tc) 4.5V, 10V 1.75mOhm @ 25A, 10V 2.2V @ 1mA 181 nC @ 10 V ±20V 11143 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
IXTP48N20T

IXTP48N20T

MOSFET N-CH 200V 48A TO220AB

Littelfuse Inc.

938
RFQ
IXTP48N20T

Ficha técnica

Trench TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 48A (Tc) 10V 50mOhm @ 24A, 10V 4.5V @ 250µA 60 nC @ 10 V ±30V 3000 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
EPC2069

EPC2069

GAN FET 40V .002OHM 8BUMP DIE

EPC

7,700
RFQ
EPC2069

Ficha técnica

- - Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 40 V - - - - - +6V, -4V - - - - - - - -
R8006KNXC7G

R8006KNXC7G

HIGH-SPEED SWITCHING NCH 800V 6A

Rohm Semiconductor

766
RFQ
R8006KNXC7G

Ficha técnica

- TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Ta) 10V 900mOhm @ 3A, 10V 4.5V @ 4mA 22 nC @ 10 V ±20V 650 pF @ 100 V - 52W (Tc) 150°C (TJ) - - Through Hole TO-220FM
IPW80R280P7XKSA1

IPW80R280P7XKSA1

MOSFET N-CH 800V 17A TO247-3

Infineon Technologies

252
RFQ
IPW80R280P7XKSA1

Ficha técnica

CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 280mOhm @ 7.2A, 10V 3.5V @ 360µA 36 nC @ 10 V ±20V 1200 pF @ 500 V - 101W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-41
STP21N65M5

STP21N65M5

MOSFET N-CH 650V 17A TO220AB

STMicroelectronics

2,110
RFQ
STP21N65M5

Ficha técnica

MDmesh™ V TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 5V @ 250µA 50 nC @ 10 V ±25V 1950 pF @ 100 V - 125W (Tc) 150°C (TJ) - - Through Hole TO-220
STP8NK80Z

STP8NK80Z

MOSFET N-CH 800V 6.2A TO220AB

STMicroelectronics

1,006
RFQ
STP8NK80Z

Ficha técnica

SuperMESH™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6.2A (Tc) 10V 1.5Ohm @ 3.1A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 1320 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
IXTA200N055T2

IXTA200N055T2

MOSFET N-CH 55V 200A TO263

Littelfuse Inc.

609
RFQ
IXTA200N055T2

Ficha técnica

TrenchT2™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 55 V 200A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 109 nC @ 10 V ±20V 6800 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AA
SUP70030E-GE3

SUP70030E-GE3

MOSFET N-CH 100V 150A TO220AB

Vishay Siliconix

384
RFQ
SUP70030E-GE3

Ficha técnica

TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) 7.5V, 10V 3.18mOhm @ 30A, 10V 4V @ 250µA 214 nC @ 10 V ±20V 10870 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IXFP12N65X2M

IXFP12N65X2M

MOSFET N-CH 650V 12A TO220

Littelfuse Inc.

282
RFQ
IXFP12N65X2M

Ficha técnica

HiPerFET™, Ultra X2 TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 310mOhm @ 6A, 10V 5V @ 250µA 18.5 nC @ 10 V ±30V 1134 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Isolated Tab
IRFP7537PBF

IRFP7537PBF

MOSFET N-CH 60V 172A TO247

Infineon Technologies

211
RFQ
IRFP7537PBF

Ficha técnica

HEXFET®, StrongIRFET™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 172A (Tc) 6V, 10V 3.3mOhm @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V 7020 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
IXFA4N100P

IXFA4N100P

MOSFET N-CH 1000V 4A TO263

Littelfuse Inc.

295
RFQ
IXFA4N100P

Ficha técnica

HiPerFET™, Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3.3Ohm @ 2A, 10V 5V @ 250µA 26 nC @ 10 V ±20V 1456 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)
FDMS030N06B

FDMS030N06B

MOSFET N-CH 60V 22.1A/100A 8PQFN

onsemi

4,096
RFQ
FDMS030N06B

Ficha técnica

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 22.1A (Ta), 100A (Tc) 10V 3mOhm @ 50A, 10V 4.5V @ 250µA 75 nC @ 10 V ±20V 7560 pF @ 30 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
IAUS200N08S5N023ATMA1

IAUS200N08S5N023ATMA1

MOSFET N-CH 80V 200A HSOG-8

Infineon Technologies

484
RFQ
IAUS200N08S5N023ATMA1

Ficha técnica

OptiMOS™ 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 200A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V 3.8V @ 130µA 110 nC @ 10 V ±20V 7670 pF @ 40 V - 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOG-8-1
NVD5C434NT4G

NVD5C434NT4G

MOSFET N-CHANNEL 40V 163A DPAK

onsemi

2,089
RFQ
NVD5C434NT4G

Ficha técnica

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 163A (Tc) 10V 2.1mOhm @ 50A, 10V 4V @ 250µA 80.6 nC @ 10 V ±20V 5400 pF @ 25 V - 117W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
IXTP48P05T

IXTP48P05T

MOSFET P-CH 50V 48A TO220AB

Littelfuse Inc.

302
RFQ
IXTP48P05T

Ficha técnica

TrenchP™ TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 50 V 48A (Tc) 10V 30mOhm @ 24A, 10V 4.5V @ 250µA 53 nC @ 10 V ±15V 3660 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRF2804STRLPBF

IRF2804STRLPBF

MOSFET N-CH 40V 75A D2PAK

Infineon Technologies

2,529
RFQ
IRF2804STRLPBF

Ficha técnica

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 2mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
FDMC86340ET80

FDMC86340ET80

MOSFET N-CH 80V 14A/68A POWER33

onsemi

1,325
RFQ
FDMC86340ET80

Ficha técnica

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 14A (Ta), 68A (Tc) 8V, 10V 6.5mOhm @ 14A, 10V 4V @ 250µA 49 nC @ 10 V ±20V 2775 pF @ 40 V - 2.8W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount Power33
TK200F04N1L,LXGQ

TK200F04N1L,LXGQ

MOSFET N-CH 40V 200A TO220SM

Toshiba Semiconductor and Storage

1,016
RFQ
TK200F04N1L,LXGQ

Ficha técnica

U-MOSVIII-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Ta) 6V, 10V 0.9mOhm @ 100A, 10V 3V @ 1mA 214 nC @ 10 V ±20V 14920 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
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