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IGBTs simples

Nº da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Série	Pacote/Caixa	Embalagem	Status do produto	Tipo de IGBT	Tensão - Coletor Emissor Ruptura (Máx.)	Corrente - Coletor (Ic) (Máx.)	Corrente - Coletor pulsado (Icm)	Vce(ligado) (máx.) @ Vge, Ic	Potência - Máx.	Energia de comutação	Tipo de entrada	Carga de porta	Td (ligado/desligado) @ 25 °C	Condição de teste	Tempo de Recuperação Reversa (trr)	Temperatura operacional	Grau	Qualificação	Tipo de montagem	Pacote do dispositivo do fornecedor
STGWA40HP65FB2 TRENCH GATE FIELD-STOP, 650 V, 4 STMicroelectronics	36	-	RFQ	Ficha técnica	HB2	TO-247-3	Tube	Active	Trench Field Stop	650 V	72 A	120 A	2V @ 15V, 40A	227 W	410µJ (off)	Standard	153 nC	-/125ns	400V, 40A, 4.7Ohm, 15V	140 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247 Long Leads
IXGA48N60A3 IGBT 600V 120A 300W TO263AA IXYS	97	-	RFQ	Ficha técnica	GenX3™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	PT	600 V	120 A	300 A	1.35V @ 15V, 32A	300 W	950µJ (on), 2.9mJ (off)	Standard	110 nC	25ns/334ns	480V, 32A, 5Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA
AIGB40N65H5ATMA1 DISCRETE SWITCHES Infineon Technologies	65	-	RFQ	Ficha técnica	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	NPT	650 V	40 A	-	-	-	-	Standard	-	-	-	-	-	-	-	Surface Mount	PG-TO263-3-2
IXXH30N65B4 IGBT PT 650V 65A TO247AD IXYS	56	-	RFQ	Ficha técnica	GenX4™, XPT™	TO-247-3	Tube	Active	PT	650 V	65 A	146 A	2V @ 15V, 30A	230 W	1.55mJ (on), 480µJ (off)	Standard	52 nC	32ns/170ns	400V, 30A, 15Ohm, 15V	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD (IXXH)
APT43GA90B IGBT PT 900V 78A TO247 Microchip Technology	81	-	RFQ	Ficha técnica	POWER MOS 8™	TO-247-3	Tube	Active	PT	900 V	78 A	129 A	3.1V @ 15V, 25A	337 W	875µJ (on), 425µJ (off)	Standard	116 nC	12ns/82ns	600V, 25A, 4.7Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
FGHL50T65SQDT IGBT TRENCH FS 650V 100A TO247-3 onsemi	26	-	RFQ	Ficha técnica	-	TO-247-3	Tube	Active	Trench Field Stop	650 V	100 A	200 A	2.1V @ 15V, 50A	268 W	223µJ (on), 91.13µJ (off)	Standard	99.7 nC	22.8ns/70ns	400V, 12.5A, 4.7Ohm, 15V	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
IXGP20N120A3 IGBT 1200V 40A 180W TO220 IXYS	31	-	RFQ	Ficha técnica	GenX3™	TO-220-3	Tube	Active	PT	1200 V	40 A	120 A	2.5V @ 15V, 20A	180 W	2.85mJ (on), 6.47mJ (off)	Standard	50 nC	16ns/290ns	960V, 20A, 10Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
NGTB40N65FL2WG IGBT TRENCH/FS 650V 80A TO247 onsemi	39	-	RFQ	Ficha técnica	-	TO-247-3	Tube	Active	Trench Field Stop	650 V	80 A	160 A	2V @ 15V, 40A	366 W	970µJ (on), 440µJ (off)	Standard	170 nC	84ns/177ns	400V, 40A, 10Ohm, 15V	72 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
IXGH10N170A IGBT NPT 1700V 10A TO247AD IXYS	88	-	RFQ	Ficha técnica	-	TO-247-3	Tube	Active	NPT	1700 V	10 A	20 A	6V @ 15V, 5A	140 W	380µJ (off)	Standard	29 nC	46ns/190ns	850V, 10A, 22Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD
APT25GT120BRDQ2G IGBT NPT 1200V 54A TO247 Microchip Technology	88	-	RFQ	Ficha técnica	Thunderbolt IGBT®	TO-247-3	Tube	Active	NPT	1200 V	54 A	75 A	3.7V @ 15V, 25A	347 W	930µJ (on), 720µJ (off)	Standard	170 nC	14ns/150ns	800V, 25A, 5Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
STGW75H65DFB2-4 TRENCH GATE FIELD-STOP, 650 V, 7 STMicroelectronics	48	-	RFQ	Ficha técnica	HB2	TO-247-4	Tube	Active	Trench Field Stop	650 V	115 A	225 A	2V @ 15V, 75A	357 W	992µJ (on), 766µJ (off)	Standard	207 nC	22ns/121ns	400V, 75A, 10Ohm, 15V	88 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
APT95GR65B2 IGBT NPT 650V 208A TMAX Microchip Technology	58	-	RFQ	Ficha técnica	-	TO-247-3	Tube	Active	NPT	650 V	208 A	400 A	2.4V @ 15V, 95A	892 W	3.12mJ (on), 2.55mJ (off)	Standard	420 nC	29ns/226ns	433V, 95A, 4.3Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
IKFW40N65ES5XKSA1 IGBT TRENCH FS 650V 60A HSIP247 Infineon Technologies	33	-	RFQ	Ficha técnica	Trenchstop™ 5	TO-247-3	Tube	Active	Trench Field Stop	650 V	60 A	120 A	1.7V @ 15V, 30A	106 W	560µJ (on), 320µJ (off)	Standard	70 nC	17ns/124ns	400V, 30A, 13Ohm, 15V	75 ns	-40°C ~ 175°C (TJ)	-	-	Through Hole	PG-HSIP247-3-2
IKFW50N65ES5XKSA1 IGBT TRENCH FS 650V 74A HSIP247 Infineon Technologies	66	-	RFQ	Ficha técnica	Trenchstop™ 5	TO-247-3	Tube	Active	Trench Field Stop	650 V	74 A	160 A	1.7V @ 15V, 40A	127 W	860µJ (on), 400µJ (off)	Standard	95 nC	19ns/130ns	400V, 40A, 10Ohm, 15V	69 ns	-40°C ~ 175°C (TJ)	-	-	Through Hole	PG-HSIP247-3-2
STGW100H65FB2-4 TRENCH GATE FIELD-STOP, 650 V, 1 STMicroelectronics	68	-	RFQ	Ficha técnica	HB2	TO-247-4	Tube	Active	Trench Field Stop	650 V	145 A	300 A	1.8V @ 15V, 100A	441 W	1.06mJ (on), 1.14mJ (off)	Standard	288 nC	23ns/141ns	400V, 100A, 3.3Ohm, 15V	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
IKZA75N65RH5XKSA1 IGBT TRENCH FS 650V 80A TO247-4 Infineon Technologies	49	-	RFQ	Ficha técnica	TrenchStop™ 5	TO-247-4	Tube	Active	Trench Field Stop	650 V	80 A	300 A	2.1V @ 15V, 75A	395 W	310µJ (on), 300µJ (off)	Standard	168 nC	25ns/180ns	400V, 37.5A, 9Ohm, 15V	-	-40°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-3
IKFW75N65ES5XKSA1 IGBT TRENCH FS 650V 80A HSIP247 Infineon Technologies	6,906	-	RFQ	Ficha técnica	Trenchstop™ 5	TO-247-3	Bulk	Active	Trench Field Stop	650 V	80 A	240 A	1.7V @ 15V, 60A	148 W	1.48mJ (on), 660µJ (off)	Standard	144 nC	24ns/152ns	400V, 60A, 8Ohm, 15V	71 ns	-40°C ~ 175°C (TJ)	-	-	Through Hole	PG-HSIP247-3-2
APT25GP120BG IGBT PT 1200V 69A TO247 Microchip Technology	18	-	RFQ	Ficha técnica	POWER MOS 7®	TO-247-3	Tube	Active	PT	1200 V	69 A	90 A	3.9V @ 15V, 25A	417 W	500µJ (on), 438µJ (off)	Standard	110 nC	12ns/70ns	600V, 25A, 5Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
IXGH10N170 IGBT 1700V 20A 110W TO247 IXYS	55	-	RFQ	Ficha técnica	-	TO-247-3	Tube	Active	NPT	1700 V	20 A	70 A	4V @ 15V, 10A	110 W	-	Standard	32 nC	-	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD
IXXH100N60C3 IGBT 600V 190A 830W TO247AD IXYS	17	-	RFQ	Ficha técnica	GenX3™, XPT™	TO-247-3	Tube	Active	PT	600 V	190 A	380 A	2.2V @ 15V, 70A	830 W	2mJ (on), 950µJ (off)	Standard	150 nC	30ns/90ns	360V, 70A, 2Ohm, 15V	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD (IXXH)

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