Por favor, contacte-nos para obter os preços mais recentes e a quantidade disponível.

IGBTs simples

Foto Nº da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Série Pacote/Caixa Embalagem Status do produto Tipo de IGBT Tensão - Coletor Emissor Ruptura (Máx.) Corrente - Coletor (Ic) (Máx.) Corrente - Coletor pulsado (Icm) Vce(ligado) (máx.) @ Vge, Ic Potência - Máx. Energia de comutação Tipo de entrada Carga de porta Td (ligado/desligado) @ 25 °C Condição de teste Tempo de Recuperação Reversa (trr) Temperatura operacional Grau Qualificação Tipo de montagem Pacote do dispositivo do fornecedor
APT85GR120B2

APT85GR120B2

IGBT NPT 1200V 170A TMAX

Microchip Technology

28
RFQ
APT85GR120B2

Ficha técnica

- TO-247-3 Tube Active NPT 1200 V 170 A 340 A 3.2V @ 15V, 85A 962 W 6mJ (on), 3.8mJ (off) Standard 660 nC 43ns/300ns 600V, 85A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole T-MAX™
AFGY160T65SPD-B4

AFGY160T65SPD-B4

IGBT TRENCH FS 650V 240A TO247-3

onsemi

28
RFQ
AFGY160T65SPD-B4

Ficha técnica

- TO-247-3 Tube Active Trench Field Stop 650 V 240 A 480 A 2.05V @ 15V, 160A 882 W 12.4mJ (on), 5.7mJ (off) Standard 245 nC 53ns/98ns 400V, 160A, 5Ohm, 15V 132 ns -55°C ~ 175°C (TJ) Automotive AEC-Q100 Through Hole TO-247-3
APT50GN120L2DQ2G

APT50GN120L2DQ2G

IGBT NPT FIELD STOP 1200V 134A

Microchip Technology

35
RFQ
APT50GN120L2DQ2G

Ficha técnica

- TO-264-3, TO-264AA Tube Active NPT, Trench Field Stop 1200 V 134 A 150 A 2.1V @ 15V, 50A 543 W 4495µJ (off) Standard 315 nC 28ns/320ns 800V, 50A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole -
IXXR110N65B4H1

IXXR110N65B4H1

IGBT 650V 150A 455W ISOPLUS247

IXYS

28
RFQ
IXXR110N65B4H1

Ficha técnica

GenX4™, XPT™ TO-247-3 Tube Active PT 650 V 150 A 460 A 2.2V @ 15V, 110A 455 W 2.2mJ (on), 1.05mJ (off) Standard 183 nC 38ns/156ns 400V, 55A, 2Ohm, 15V 100 ns -55°C ~ 175°C (TJ) - - Through Hole ISOPLUS247™
APT65GP60L2DQ2G

APT65GP60L2DQ2G

IGBT PT 600V 198A

Microchip Technology

13
RFQ
APT65GP60L2DQ2G

Ficha técnica

POWER MOS 7® TO-264-3, TO-264AA Tube Active PT 600 V 198 A 250 A 2.7V @ 15V, 65A 833 W 605µJ (on), 895µJ (off) Standard 210 nC 30ns/90ns 400V, 65A, 5Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole -
IXBA16N170AHV

IXBA16N170AHV

REVERSE CONDUCTING IGBT

IXYS

8
RFQ
IXBA16N170AHV

Ficha técnica

BIMOSFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active - 1700 V 16 A 40 A 6V @ 15V, 10A 150 W 2.5mJ (off) Standard 65 nC 15ns/250ns 1360V, 10A, 10Ohm, 15V 25 ns -55°C ~ 150°C (TJ) - - Surface Mount TO-263HV
IXXK300N60B3

IXXK300N60B3

IGBT 600V 550A 2300W TO264

IXYS

9
RFQ
IXXK300N60B3

Ficha técnica

GenX3™, XPT™ TO-264-3, TO-264AA Tube Active PT 600 V 550 A 1140 A 1.6V @ 15V, 100A 2300 W 3.45mJ (on), 2.86mJ (off) Standard 460 nC 50ns/190ns 400V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) - - Through Hole TO-264 (IXXK)
STGD4H60DF

STGD4H60DF

IGBT TRENCH FS 600V 8A DPAK

STMicroelectronics

256
RFQ
STGD4H60DF

Ficha técnica

H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Trench Field Stop 600 V 8 A 16 A 1.95V @ 15V, 3A 75 W 68µJ (on), 45µJ (off) Standard 35 nC 35ns/121ns 400V, 3A, 47Ohm, 15V 73 ns -55°C ~ 175°C (TJ) - - Surface Mount DPAK (TO-252) type C2
GT20J341,S4X(S

GT20J341,S4X(S

DISCRETE IGBT TRANSISTOR TO-220S

Toshiba Semiconductor and Storage

75
RFQ
GT20J341,S4X(S

Ficha técnica

- TO-220-3 Full Pack Tube Active - 600 V 20 A 80 A 2V @ 15V, 20A 45 W 500µJ (on), 400µJ (off) Standard - 60ns/240ns 300V, 20A, 33Ohm, 15V 90 ns 150°C (TJ) - - Through Hole TO-220SIS
STGWA30M65DF2AG

STGWA30M65DF2AG

AUTOMOTIVE-GRADE TRENCH GATE FIE

STMicroelectronics

50
RFQ
STGWA30M65DF2AG

Ficha técnica

M TO-247-3 Tube Active Trench Field Stop 650 V 87 A 120 A 2V @ 15V, 30A 441 W 756µJ (on), 1.057mJ (off) Standard 81.6 nC 21.6ns/138ns 400V, 30A, 10Ohm, 15V 151 ns -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247 Long Leads
GT30J65MRB,S1E

GT30J65MRB,S1E

650V SILICON N-CHANNEL IGBT, TO-

Toshiba Semiconductor and Storage

64
RFQ

-

- TO-3P-3, SC-65-3 Tube Active - 650 V 60 A - 1.8V @ 15V, 30A 200 W 1.4mJ (on), 220µJ (off) Standard 70 nC 75ns/400ns 400V, 15A, 56Ohm, 15V 200 ns 175°C (TJ) - - Through Hole TO-3P(N)
STGWA25IH135DF2

STGWA25IH135DF2

IGBT TRENCH FS 1.35KV 50A TO247

STMicroelectronics

46
RFQ
STGWA25IH135DF2

Ficha técnica

IH2 TO-247-3 Tube Active Trench Field Stop 1350 V 50 A 100 A 2.2V @ 15V, 20A 340 W 1mJ (off) Standard 166 nC - 600V, 20A, 10Ohm, 15V - -55°C ~ 175°C (TJ) - - Through Hole TO-247 Long Leads
RGW40NL65HRBTL

RGW40NL65HRBTL

IGBT TRENCH FS 650V 48A TO263L

Rohm Semiconductor

1,000
RFQ
RGW40NL65HRBTL

Ficha técnica

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Trench Field Stop 650 V 48 A 80 A 1.9V @ 15V, 20A 144 W 110µJ (on), 160µJ (off) Standard 59 nC 33ns/129ns 400V, 10A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263L
GT40QR21(STA1,E,D

GT40QR21(STA1,E,D

IGBT 1200V 40A TO3P

Toshiba Semiconductor and Storage

82
RFQ
GT40QR21(STA1,E,D

Ficha técnica

- TO-3P-3, SC-65-3 Tube Active - 1200 V 40 A 80 A 2.7V @ 15V, 40A 230 W -, 290µJ (off) Standard - - 280V, 40A, 10Ohm, 20V 600 ns 175°C (TJ) - - Through Hole TO-3P(N)
RGW50NL65DHRBTL

RGW50NL65DHRBTL

IGBT TRENCH FS 650V 57A TO263L

Rohm Semiconductor

1,000
RFQ
RGW50NL65DHRBTL

Ficha técnica

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Trench Field Stop 650 V 57 A 100 A 1.9V @ 15V, 25A 165 W 110µJ (on), 230µJ (off) Standard 73 nC 31ns/119ns 400V, 12.5A, 10Ohm, 15V 71 ns -40°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263L
RGS50NL65HRBTL

RGS50NL65HRBTL

IGBT TRENCH FS 650V 50A TO263L

Rohm Semiconductor

1,000
RFQ
RGS50NL65HRBTL

Ficha técnica

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Trench Field Stop 650 V 50 A 75 A 2.1V @ 15V, 25A 206 W 810µJ (on), 650µJ (off) Standard 31 nC 28ns/91ns 400V, 25A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263L
RGW60NL65DHRBTL

RGW60NL65DHRBTL

IGBT TRENCH FS 650V 67A TO263L

Rohm Semiconductor

1,000
RFQ
RGW60NL65DHRBTL

Ficha técnica

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Trench Field Stop 650 V 67 A 120 A 1.9V @ 15V, 30A 187 W 180µJ (on), 250µJ (off) Standard 84 nC 34ns/122ns 400V, 15A, 10Ohm, 15V 96 ns -40°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263L
GT50N322A

GT50N322A

IGBT 1000V 50A TO3P

Toshiba Semiconductor and Storage

52
RFQ
GT50N322A

Ficha técnica

- TO-3P-3, SC-65-3 Tray Active - 1000 V 50 A 120 A 2.8V @ 15V, 60A 156 W - Standard - - - 800 ns 150°C (TJ) - - Through Hole TO-3P(N)
GT50JR21(STA1,E,S)

GT50JR21(STA1,E,S)

PB-F IGBT / TRANSISTOR TO-3PN(OS

Toshiba Semiconductor and Storage

37
RFQ
GT50JR21(STA1,E,S)

Ficha técnica

- TO-3P-3, SC-65-3 Tube Active - 600 V 50 A 100 A 2V @ 15V, 50A 230 W - Standard - - - - 175°C (TJ) - - Through Hole TO-3P(N)
APT25GP90BG

APT25GP90BG

IGBT PT 900V 72A TO247

Microchip Technology

51
RFQ
APT25GP90BG

Ficha técnica

POWER MOS 7® TO-247-3 Tube Active PT 900 V 72 A 110 A 3.9V @ 15V, 25A 417 W 370µJ (off) Standard 110 nC 13ns/55ns 600V, 25A, 5Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
Total 4371 Record«Prev1... 7980818283848586...219Next»

Comece agora!

Obtenha as últimas notícias

EASTECH Electronics

Início

EASTECH Electronics

Pesquisar

EASTECH Electronics

Produtos

EASTECH Electronics

Whatsapp

Enviando...
×
Enviado com sucesso!
Obrigado pelo seu envio, nossa equipe de vendas receberá sua solicitação e entraremos em contato dentro de 12 horas com uma cotação.
OK