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Início > Produtos > Produtos Semicondutores Discretos > Diodos > Retificadores > Matrizes de diodos

Matrizes de diodos

Nº da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Série	Pacote/Caixa	Embalagem	Status do produto	Configuração do Diodo	Tecnologia	Tensão - DC Reversa (Vr) (Máx.)	Corrente - Média Retificada (Io) (por Diodo)	Tensão - Direta (Vf) (Máx.) @ If	Velocidade	Tempo de Recuperação Reversa (trr)	Corrente - Fuga Reversa @ Vr	Temperatura Operacional - Junção	Grau	Qualificação	Tipo de montagem	Pacote do dispositivo do fornecedor
MDD310-14N1 DIODE MODULE GP 1400V 305A Y2DCB IXYS	5,382	-	RFQ	Ficha técnica	-	Y2-DCB	Box	Active	1 Pair Series Connection	Standard	1400 V	305A	1.2 V @ 600 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 1400 V	-40°C ~ 150°C	-	-	Chassis Mount	Y2-DCB
DD89N16KHPSA2 DIODE MODULE GP 1600V 89A MODULE Infineon Technologies	2,521	-	RFQ	-	-	Module	Tray	Active	1 Pair Series Connection	Standard	1600 V	89A	1.5 V @ 300 A	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1600 V	150°C	-	-	Chassis Mount	Module
MBRT40035 DIODE MOD SCHOTT 35V 200A 3TOWER GeneSiC Semiconductor	2,462	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Cathode	Schottky	35 V	200A	750 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT400100R DIODE MOD SCHOT 100V 200A 3TOWER GeneSiC Semiconductor	2,747	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Anode	Schottky, Reverse Polarity	100 V	200A	880 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT40035R DIODE MOD SCHOTT 35V 200A 3TOWER GeneSiC Semiconductor	4,351	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Anode	Schottky, Reverse Polarity	35 V	200A	750 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT40045R DIODE MOD SCHOTT 45V 200A 3TOWER GeneSiC Semiconductor	3,512	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Anode	Schottky	45 V	200A	750 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT40020 DIODE MOD SCHOTT 20V 200A 3TOWER GeneSiC Semiconductor	2,509	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Cathode	Schottky	20 V	200A	750 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT40020R DIODE MOD SCHOTT 20V 200A 3TOWER GeneSiC Semiconductor	8,009	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Anode	Schottky	20 V	200A	750 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT40030 DIODE MOD SCHOTT 30V 200A 3TOWER GeneSiC Semiconductor	6,518	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Cathode	Schottky	30 V	200A	750 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT40030R DIODE MOD SCHOTT 30V 200A 3TOWER GeneSiC Semiconductor	6,563	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Anode	Schottky	30 V	200A	750 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT40040 DIODE MOD SCHOTT 40V 200A 3TOWER GeneSiC Semiconductor	3,261	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Cathode	Schottky	40 V	200A	750 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT40040R DIODE MOD SCHOTT 40V 200A 3TOWER GeneSiC Semiconductor	2,619	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Anode	Schottky	40 V	200A	750 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT40060 DIODE MOD SCHOTT 60V 200A 3TOWER GeneSiC Semiconductor	9,311	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Cathode	Schottky	60 V	200A	800 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT40060R DIODE MOD SCHOTT 60V 200A 3TOWER GeneSiC Semiconductor	4,701	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Anode	Schottky	60 V	200A	800 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT40080 DIODE MOD SCHOTT 80V 200A 3TOWER GeneSiC Semiconductor	9,570	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Cathode	Schottky	80 V	200A	880 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT40080R DIODE MOD SCHOTT 80V 200A 3TOWER GeneSiC Semiconductor	7,749	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Anode	Schottky	80 V	200A	880 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MUR30010CT DIODE MODULE GP 100V 150A 2TOWER GeneSiC Semiconductor	8,036	-	RFQ	Ficha técnica	-	Twin Tower	Bulk	Active	1 Pair Common Cathode	Standard	100 V	150A	1.3 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Twin Tower
MUR30010CTR DIODE MODULE GP 100V 150A 2TOWER GeneSiC Semiconductor	6,932	-	RFQ	Ficha técnica	-	Twin Tower	Bulk	Active	1 Pair Common Anode	Standard	100 V	150A	1.3 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Twin Tower
MUR30020CT DIODE MODULE GP 200V 150A 2TOWER GeneSiC Semiconductor	8,554	-	RFQ	Ficha técnica	-	Twin Tower	Bulk	Active	1 Pair Common Cathode	Standard	200 V	150A	1.3 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Twin Tower
MUR30020CTR DIODE MODULE GP 200V 150A 2TOWER GeneSiC Semiconductor	3,975	-	RFQ	Ficha técnica	-	Twin Tower	Bulk	Active	1 Pair Common Anode	Standard	200 V	150A	1.3 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Twin Tower

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