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Início > Produtos > Produtos Semicondutores Discretos > Diodos > Retificadores > Matrizes de diodos

Matrizes de diodos

Nº da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Série	Pacote/Caixa	Embalagem	Status do produto	Configuração do Diodo	Tecnologia	Tensão - DC Reversa (Vr) (Máx.)	Corrente - Média Retificada (Io) (por Diodo)	Tensão - Direta (Vf) (Máx.) @ If	Velocidade	Tempo de Recuperação Reversa (trr)	Corrente - Fuga Reversa @ Vr	Temperatura Operacional - Junção	Grau	Qualificação	Tipo de montagem	Pacote do dispositivo do fornecedor
MUR30040CT DIODE MODULE GP 400V 150A 2TOWER GeneSiC Semiconductor	8,211	-	RFQ	Ficha técnica	-	Twin Tower	Bulk	Active	1 Pair Common Cathode	Standard	400 V	150A	1.5 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Twin Tower
MUR30040CTR DIODE MODULE GP 400V 150A 2TOWER GeneSiC Semiconductor	3,133	-	RFQ	Ficha técnica	-	Twin Tower	Bulk	Active	1 Pair Common Anode	Standard	400 V	150A	1.5 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Twin Tower
MUR30060CT DIODE MODULE GP 600V 150A 2TOWER GeneSiC Semiconductor	5,030	-	RFQ	Ficha técnica	-	Twin Tower	Bulk	Active	1 Pair Common Cathode	Standard	600 V	150A	1.7 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Twin Tower
MUR30060CTR DIODE MODULE GP 600V 150A 2TOWER GeneSiC Semiconductor	5,754	-	RFQ	Ficha técnica	-	Twin Tower	Bulk	Active	1 Pair Common Anode	Standard	600 V	150A	1.7 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Twin Tower
MURT30010 DIODE MODULE GP 100V 150A 3TOWER GeneSiC Semiconductor	3,682	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Cathode	Standard	100 V	150A	1.3 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MURT30010R DIODE MODULE GP 100V 150A 3TOWER GeneSiC Semiconductor	7,145	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Anode	Standard	100 V	150A	1.3 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MURT30020 DIODE MODULE GP 200V 150A 3TOWER GeneSiC Semiconductor	6,682	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Cathode	Standard	200 V	150A	1.3 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MURT30020R DIODE MODULE GP 200V 150A 3TOWER GeneSiC Semiconductor	9,973	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Anode	Standard	200 V	150A	1.3 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MURT30040 DIODE MODULE GP 400V 150A 3TOWER GeneSiC Semiconductor	3,820	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Cathode	Standard	400 V	150A	1.35 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MURT30040R DIODE MODULE GP 400V 150A 3TOWER GeneSiC Semiconductor	3,181	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Anode	Standard	400 V	150A	1.35 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MURT30060 DIODE MODULE GP 600V 150A 3TOWER GeneSiC Semiconductor	2,447	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Cathode	Standard	600 V	150A	1.7 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MURT30060R DIODE MODULE GP 600V 150A 3TOWER GeneSiC Semiconductor	8,691	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Anode	Standard	600 V	150A	1.7 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	25 µA @ 50 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT400150 DIODE MOD SCHOT 150V 200A 3TOWER GeneSiC Semiconductor	2,117	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Cathode	Schottky	150 V	200A	880 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 150 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT400150R DIODE MOD SCHOT 150V 200A 3TOWER GeneSiC Semiconductor	6,510	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Anode	Schottky	150 V	200A	880 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 150 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT400200 DIODE MOD SCHOT 200V 200A 3TOWER GeneSiC Semiconductor	8,201	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Cathode	Schottky	200 V	200A	920 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 200 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MBRT400200R DIODE MOD SCHOT 200V 200A 3TOWER GeneSiC Semiconductor	3,474	-	RFQ	Ficha técnica	-	Three Tower	Bulk	Active	1 Pair Common Anode	Schottky	200 V	200A	920 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 200 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
JAN1N7047CCT3 DIODE ARR SCHOTT 150V 16A TO-257 Microchip Technology	6,768	-	RFQ	-	-	TO-257-3	Bulk	Active	1 Pair Common Cathode	Schottky	150 V	16A	1.13 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 150 V	-65°C ~ 150°C	Military	MIL-PRF-19500/737	Through Hole	TO-257
M50100DD600 DIODE MODULE GP 600V 100A MODULE Sensata-Crydom	5,419	-	RFQ	Ficha técnica	-	Module	Bulk	Obsolete	1 Pair Series Connection	Standard	600 V	100A	1.2 V @ 100 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-40°C ~ 125°C	-	-	Chassis Mount	Module
JANTXV1N5712UBD DIODE ARRAY SCHOTTKY 16V 75MA UB Microchip Technology	4,791	-	RFQ	-	-	4-SMD, No Lead	Bulk	Active	1 Pair Series Connection	Schottky	16 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	-65°C ~ 150°C	Military	MIL-PRF-19500/444	Surface Mount	UB
JANTXV1N5712UBCA DIODE ARRAY SCHOTTKY 16V 75MA UB Microchip Technology	5,700	-	RFQ	-	-	4-SMD, No Lead	Bulk	Active	1 Pair Common Anode	Schottky	16 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	-65°C ~ 150°C	Military	MIL-PRF-19500/444	Surface Mount	UB

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