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FETs, MOSFETs

Foto Nº da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Série Pacote/Caixa Embalagem Status do produto Tipo FET Tecnologia Dreno para tensão de fonte (Vdss) Corrente - Dreno contínuo (Id) @ 25 °C Tensão de acionamento (máx. Rds ligado, mín. Rds ligado) Rds ligado (Máx.) @ Id, Vgs Vgs(th) (Máx.) @ Id Carga de porta (Qg) (máx.) @ Vgs Vgs (máx.) Capacitância de entrada (Ciss) (máx.) @ Vds Característica FET Dissipação de Energia (Máx.) Temperatura operacional Grau Qualificação Tipo de montagem Pacote do dispositivo do fornecedor
IRF8302MTR1PBF

IRF8302MTR1PBF

MOSFET N CH 30V 31A MX

Infineon Technologies

8,690
RFQ
IRF8302MTR1PBF

Ficha técnica

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 31A (Ta), 190A (Tc) 4.5V, 10V 1.8mOhm @ 31A, 10V 2.35V @ 150µA 53 nC @ 4.5 V ±20V 6030 pF @ 15 V - 2.8W (Ta), 104W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MX
IRF8304MTR1PBF

IRF8304MTR1PBF

MOSFET N-CH 30V 28A DIRECTFET

Infineon Technologies

2,705
RFQ
IRF8304MTR1PBF

Ficha técnica

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 28A, 10V 2.35V @ 100µA 42 nC @ 4.5 V ±20V 4700 pF @ 15 V - 2.8W (Ta), 100W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MX
IRF8327STR1PBF

IRF8327STR1PBF

MOSFET N-CH 30V 14A DIRECTFET

Infineon Technologies

9,456
RFQ
IRF8327STR1PBF

Ficha técnica

- DirectFET™ Isometric SQ Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 60A (Tc) 4.5V, 10V 7.3mOhm @ 14A, 10V 2.4V @ 25µA 14 nC @ 4.5 V ±20V 1430 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ SQ
AUIRF1018ES

AUIRF1018ES

MOSFET N-CH 60V 79A D2PAK

Infineon Technologies

5,164
RFQ
AUIRF1018ES

Ficha técnica

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 79A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRF1404

AUIRF1404

MOSFET N-CH 40V 160A TO220AB

Infineon Technologies

3,454
RFQ
AUIRF1404

Ficha técnica

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 4mOhm @ 121A, 10V 4V @ 250µA 196 nC @ 10 V ±20V 5669 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
AUIRF1404S

AUIRF1404S

MOSFET N-CH 40V 75A D2PAK

Infineon Technologies

7,780
RFQ
AUIRF1404S

Ficha técnica

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRF1405

AUIRF1405

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies

2,536
RFQ
AUIRF1405

Ficha técnica

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
AUIRF2805

AUIRF2805

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies

3,343
RFQ
AUIRF2805

Ficha técnica

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5110 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
AUIRF2805S

AUIRF2805S

MOSFET N-CH 55V 135A D2PAK

Infineon Technologies

7,107
RFQ
AUIRF2805S

Ficha técnica

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued N-Channel MOSFET (Metal Oxide) 55 V 135A (Tc) 10V 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5110 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRF2807

AUIRF2807

MOSFET N-CH 75V 75A TO220AB

Infineon Technologies

7,504
RFQ
AUIRF2807

Ficha técnica

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
AUIRF2903Z

AUIRF2903Z

MOSFET N-CH 30V 160A TO220AB

Infineon Technologies

6,201
RFQ
AUIRF2903Z

Ficha técnica

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
AUIRF2903ZL

AUIRF2903ZL

MOSFET N-CH 30V 160A TO262

Infineon Technologies

6,496
RFQ
AUIRF2903ZL

Ficha técnica

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 150µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
AUIRF2903ZS

AUIRF2903ZS

MOSFET N-CH 30V 160A D2PAK

Infineon Technologies

3,874
RFQ
AUIRF2903ZS

Ficha técnica

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 150µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRF3004WL

AUIRF3004WL

MOSFET N-CH 40V 240A TO262-3

Infineon Technologies

5,882
RFQ
AUIRF3004WL

Ficha técnica

HEXFET® TO-262-3 Wide Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.4mOhm @ 195A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9450 pF @ 32 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-262-3 Wide
AUIRF3007

AUIRF3007

MOSFET N-CH 75V 75A TO220AB

Infineon Technologies

7,790
RFQ
AUIRF3007

Ficha técnica

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 12.6mOhm @ 48A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3270 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
AUIRF3315S

AUIRF3315S

MOSFET N-CH 150V 21A D2PAK

Infineon Technologies

3,303
RFQ
AUIRF3315S

Ficha técnica

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRF3415

AUIRF3415

MOSFET N-CH 150V 43A TO220AB

Infineon Technologies

7,149
RFQ
AUIRF3415

Ficha técnica

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2400 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
AUIRF3504

AUIRF3504

MOSFET N-CH 40V 87A TO220AB

Infineon Technologies

7,833
RFQ
AUIRF3504

Ficha técnica

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 87A (Tc) 10V 9.2mOhm @ 52A, 10V 4V @ 100µA 54 nC @ 10 V ±20V 2150 pF @ 25 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
AUIRF3808S

AUIRF3808S

MOSFET N-CH 75V 106A D2PAK

Infineon Technologies

7,718
RFQ
AUIRF3808S

Ficha técnica

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 106A (Tc) 10V 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRF4905L

AUIRF4905L

MOSFET P-CH 55V 42A TO262

Infineon Technologies

5,091
RFQ
AUIRF4905L

Ficha técnica

HEXFET® TO-262 Tube Obsolete P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262

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