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FETs, MOSFETs

Foto Nº da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Série Pacote/Caixa Embalagem Status do produto Tipo FET Tecnologia Dreno para tensão de fonte (Vdss) Corrente - Dreno contínuo (Id) @ 25 °C Tensão de acionamento (máx. Rds ligado, mín. Rds ligado) Rds ligado (Máx.) @ Id, Vgs Vgs(th) (Máx.) @ Id Carga de porta (Qg) (máx.) @ Vgs Vgs (máx.) Capacitância de entrada (Ciss) (máx.) @ Vds Característica FET Dissipação de Energia (Máx.) Temperatura operacional Grau Qualificação Tipo de montagem Pacote do dispositivo do fornecedor
AUIRFS3004-7P

AUIRFS3004-7P

MOSFET N-CH 40V 240A D2PAK-7

Infineon Technologies

7,641
RFQ
AUIRFS3004-7P

Ficha técnica

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.25mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9130 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
AUIRFS3107-7P

AUIRFS3107-7P

MOSFET N-CH 75V 240A D2PAK

Infineon Technologies

2,880
RFQ
AUIRFS3107-7P

Ficha técnica

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) 10V 2.6mOhm @ 160A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
AUIRFS3206

AUIRFS3206

MOSFET N-CH 60V 120A D2PAK

Infineon Technologies

5,479
RFQ
AUIRFS3206

Ficha técnica

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRFS3207Z

AUIRFS3207Z

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies

8,754
RFQ
AUIRFS3207Z

Ficha técnica

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 4.1mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6920 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRFS4010

AUIRFS4010

MOSFET N-CH 100V 180A D2PAK

Infineon Technologies

9,335
RFQ
AUIRFS4010

Ficha técnica

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
AUIRFS4010-7P

AUIRFS4010-7P

MOSFET N-CH 100V 190A D2PAK

Infineon Technologies

2,414
RFQ
AUIRFS4010-7P

Ficha técnica

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 10V 4mOhm @ 110A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 9830 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
AUIRFS4310Z

AUIRFS4310Z

MOSFET N-CH 100V 120A D2PAK

Infineon Technologies

6,067
RFQ
AUIRFS4310Z

Ficha técnica

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRFS4410Z

AUIRFS4410Z

MOSFET N-CH 100V 97A D2PAK

Infineon Technologies

5,090
RFQ
AUIRFS4410Z

Ficha técnica

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
AUIRFU1010Z

AUIRFU1010Z

MOSFET N-CH 55V 91A TO262

Infineon Technologies

5,252
RFQ
AUIRFU1010Z

Ficha técnica

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete - - - 42A (Tc) - - - - - - - - - - - Through Hole TO-262
AUIRFZ24NS

AUIRFZ24NS

MOSFET N-CH 55V 17A DPAK

Infineon Technologies

8,988
RFQ
AUIRFZ24NS

Ficha técnica

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
AUIRFZ34N

AUIRFZ34N

MOSFET N-CH 55V 29A TO220AB

Infineon Technologies

3,184
RFQ
AUIRFZ34N

Ficha técnica

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
AUIRFZ44N

AUIRFZ44N

MOSFET N-CH 55V 49A TO220AB

Infineon Technologies

2,958
RFQ
AUIRFZ44N

Ficha técnica

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
AUIRFZ44NS

AUIRFZ44NS

MOSFET N-CH 55V 49A D2PAK

Infineon Technologies

3,237
RFQ
AUIRFZ44NS

Ficha técnica

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRFZ46NL

AUIRFZ46NL

MOSFET N-CH 55V 39A TO262

Infineon Technologies

5,311
RFQ
AUIRFZ46NL

Ficha técnica

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 39A (Tc) 10V 16.5mOhm @ 28A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1696 pF @ 25 V - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
AUIRL2203N

AUIRL2203N

MOSFET N-CH 30V 75A TO220AB

Infineon Technologies

6,847
RFQ
AUIRL2203N

Ficha técnica

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 1V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
AUIRLL014N

AUIRLL014N

MOSFET N-CH 55V 2A SOT-223

Infineon Technologies

8,304
RFQ
AUIRLL014N

Ficha técnica

HEXFET® TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 2A (Ta) 4V, 10V 140mOhm @ 2A, 10V 2V @ 250µA 14 nC @ 10 V ±16V 230 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
AUIRLL024N

AUIRLL024N

MOSFET N-CH 55V 3.1A SOT-223

Infineon Technologies

2,976
RFQ
AUIRLL024N

Ficha técnica

HEXFET® TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 3.1A (Ta) 4V, 10V 65mOhm @ 3.1A, 10V 2V @ 250µA 15.6 nC @ 5 V ±16V 510 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
AUIRLR014N

AUIRLR014N

MOSFET N-CH 55V 10A DPAK

Infineon Technologies

3,969
RFQ
AUIRLR014N

Ficha técnica

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 10A (Tc) 4.5V, 10V 140mOhm @ 6A, 10V 3V @ 250µA 7.9 nC @ 5 V ±16V 265 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
AUIRLR120N

AUIRLR120N

MOSFET N-CH 100V 10A DPAK

Infineon Technologies

8,918
RFQ
AUIRLR120N

Ficha técnica

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 185mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
AUIRLR2908

AUIRLR2908

MOSFET N-CH 80V 30A DPAK

Infineon Technologies

6,683
RFQ
AUIRLR2908

Ficha técnica

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) 4.5V, 10V 28mOhm @ 23A, 10V 2.5V @ 250µA 33 nC @ 4.5 V ±16V 1890 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)

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