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FETs, MOSFETs

Foto Nº da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Série Pacote/Caixa Embalagem Status do produto Tipo FET Tecnologia Dreno para tensão de fonte (Vdss) Corrente - Dreno contínuo (Id) @ 25 °C Tensão de acionamento (máx. Rds ligado, mín. Rds ligado) Rds ligado (Máx.) @ Id, Vgs Vgs(th) (Máx.) @ Id Carga de porta (Qg) (máx.) @ Vgs Vgs (máx.) Capacitância de entrada (Ciss) (máx.) @ Vds Característica FET Dissipação de Energia (Máx.) Temperatura operacional Grau Qualificação Tipo de montagem Pacote do dispositivo do fornecedor
SPP20N60S5HKSA1

SPP20N60S5HKSA1

HIGH POWER_LEGACY

Infineon Technologies

9,742
RFQ
SPP20N60S5HKSA1

Ficha técnica

CoolMOS™ TO-220-3 Tube Discontinued N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 13A, 10V 5.5V @ 1mA 103 nC @ 10 V ±20V 3000 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IPD50R399CPBTMA1

IPD50R399CPBTMA1

LOW POWER_LEGACY

Infineon Technologies

4,251
RFQ
IPD50R399CPBTMA1

Ficha técnica

CoolMOS™ CP TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 399mOhm @ 4.9A, 10V 3.5V @ 330µA 23 nC @ 10 V ±20V 890 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-313
IPD50R520CPATMA1

IPD50R520CPATMA1

LOW POWER_LEGACY

Infineon Technologies

6,030
RFQ
IPD50R520CPATMA1

Ficha técnica

CoolMOS™ CP TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 500 V 7.1A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 17 nC @ 10 V ±20V 680 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-313
IPD65R600C6ATMA1

IPD65R600C6ATMA1

LOW POWER_LEGACY

Infineon Technologies

7,399
RFQ
IPD65R600C6ATMA1

Ficha técnica

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-313
SPP04N50C3XKSA1

SPP04N50C3XKSA1

LOW POWER_LEGACY

Infineon Technologies

8,903
RFQ
SPP04N50C3XKSA1

Ficha técnica

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 560 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 22 nC @ 10 V ±20V 470 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
SPP06N60C3XKSA1

SPP06N60C3XKSA1

LOW POWER_LEGACY

Infineon Technologies

4,318
RFQ
SPP06N60C3XKSA1

Ficha técnica

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 750mOhm @ 3.9A, 10V 3.9V @ 260µA 31 nC @ 10 V ±20V 620 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
SPP07N60S5HKSA1

SPP07N60S5HKSA1

LOW POWER_LEGACY

Infineon Technologies

8,882
RFQ
SPP07N60S5HKSA1

Ficha técnica

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 5.5V @ 350µA 35 nC @ 10 V ±20V 970 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
SPP07N60S5XKSA1

SPP07N60S5XKSA1

LOW POWER_LEGACY

Infineon Technologies

5,457
RFQ
SPP07N60S5XKSA1

Ficha técnica

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 5.5V @ 350µA 35 nC @ 10 V ±20V 970 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
SPP07N65C3XKSA1

SPP07N65C3XKSA1

LOW POWER_LEGACY

Infineon Technologies

6,641
RFQ
SPP07N65C3XKSA1

Ficha técnica

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
SPP11N60S5XKSA1

SPP11N60S5XKSA1

LOW POWER_LEGACY

Infineon Technologies

6,833
RFQ
SPP11N60S5XKSA1

Ficha técnica

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 7A, 10V 5.5V @ 500µA 54 nC @ 10 V ±20V 1460 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
BSC020N03LSGATMA2

BSC020N03LSGATMA2

LV POWER MOS

Infineon Technologies

4,242
RFQ
BSC020N03LSGATMA2

Ficha técnica

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPB50N12S3L15ATMA1

IPB50N12S3L15ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies

6,711
RFQ
IPB50N12S3L15ATMA1

Ficha técnica

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120 V 50A (Tc) 4.5V, 10V 15.7mOhm @ 50A, 10V 2.4V @ 60µA 57 nC @ 10 V ±20V 4180 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3-2
IPB70N12S3L12ATMA1

IPB70N12S3L12ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies

2,832
RFQ
IPB70N12S3L12ATMA1

Ficha técnica

OptiMOS™ T TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 4.5V, 10V 12.1mOhm @ 70A, 10V 2.4V @ 83µA 77 nC @ 10 V ±20V 5550 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3-2
IPD70N12S3L12ATMA1

IPD70N12S3L12ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies

8,025
RFQ
IPD70N12S3L12ATMA1

Ficha técnica

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 4.5V, 10V 11.5mOhm @ 70A, 10V 2.4V @ 83µA 77 nC @ 10 V ±20V 5550 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-11
IPC302N15N3X7SA1

IPC302N15N3X7SA1

MV POWER MOS

Infineon Technologies

5,629
RFQ
IPC302N15N3X7SA1

Ficha técnica

OptiMOS™ 3 Die Bulk Active N-Channel MOSFET (Metal Oxide) 150 V - 10V 100mOhm @ 2A, 10V 4V @ 270µA - - - - - - - - Surface Mount Die
IPT043N15N5ATMA1

IPT043N15N5ATMA1

MV POWER MOS

Infineon Technologies

2,070
RFQ
IPT043N15N5ATMA1

Ficha técnica

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
BSP612PH6327XTSA1

BSP612PH6327XTSA1

SMALL SIGNAL+P-CH

Infineon Technologies

7,464
RFQ
BSP612PH6327XTSA1

Ficha técnica

OptiMOS™ - Tape & Reel (TR) Obsolete - - - 3A (Ta) - - - - - - - - - Automotive AEC-Q101 - -
2SJ438(AISIN,A,Q)

2SJ438(AISIN,A,Q)

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

5,112
RFQ
2SJ438(AISIN,A,Q)

Ficha técnica

- TO-220-3 Full Pack Bulk Obsolete - - - 5A (Tj) - - - - - - - - - - - Through Hole TO-220NIS
2SJ438(AISIN,Q,M)

2SJ438(AISIN,Q,M)

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

9,169
RFQ
2SJ438(AISIN,Q,M)

Ficha técnica

- TO-220-3 Full Pack Bulk Obsolete - - - 5A (Tj) - - - - - - - - - - - Through Hole TO-220NIS
2SJ438(CANO,Q,M)

2SJ438(CANO,Q,M)

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

4,507
RFQ
2SJ438(CANO,Q,M)

Ficha técnica

- TO-220-3 Full Pack Bulk Obsolete - - - 5A (Tj) - - - - - - - - - - - Through Hole TO-220NIS

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